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Mfr.Part # : RN1911FE,LF(CT
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Stock : 3980
Product Category : Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Frequency - Transition : 250MHz
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Power - Max : 100mW
Product Status : Active
Resistor - Base (R1) : 10kOhms
Supplier Device Package : ES6
Transistor Type : 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) : 50V
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